[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Characterization of Anisotropic Strain Relaxation after Mesa Isolation for Strained SGOI and SiGe/Si Structure with Newly Developed High-NA and Oil-Immersion Raman Method
Usuda, Koji, Kosemura, Daisuke, Tomita, Motohiro, Ogura, Atsushi, Tezuka, TsutomuYear:
2012
Language:
english
DOI:
10.1109/istdm.2012.6222440
File:
PDF, 326 KB
english, 2012