[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Dopant redistribution effects in preamorphized silicon during low temperature annealing
Venezia, V.C., Duffy, R., Pelaz, L., Aboy, M., Heringa, A., Griffin, P.B., Wang, C.C., Hopstaken, M.J.P., Tamminga, Y., Dao, T., Pawlak, B., Roozeboom, F.Year:
2003
Language:
english
DOI:
10.1109/iedm.2003.1269328
File:
PDF, 244 KB
english, 2003