Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGe HBTs
Guofu Niu,, Hua Yang,, Varadharajaperumal, M., Yun Shi,, Cressler, J.D., Krithivasan, R., Marshall, P.W., Reed, R.Volume:
52
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2005.860744
Date:
December, 2005
File:
PDF, 395 KB
english, 2005