[IEEE 2002 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, USA (11-13 June 2002)] 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) - A highly manufacturable 110 nm DRAM technology with 8F/sup 2/ vertical transistor cell for 1Gb and beyond

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