[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Physical understandings of si (110) hole mobility in ultra-thin body pFETs by ≪110≫ and ≪111≫ uniaxial compressive strain

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