[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - CMOS and interconnect reliability gate dielectric breakdown - modeling and mechanism
Nicollian, P., Eriguchi, K.Year:
2005
Language:
english
DOI:
10.1109/iedm.2005.1609358
File:
PDF, 140 KB
english, 2005