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[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials
Virwani, K., Burr, G. W., Shenoy, R. S., Rettner, C. T., Padilla, A., Topuria, T., Rice, P. M., Ho, G., King, R. S., Nguyen, K., Bowers, A. N., Jurich, M., BrightSky, M., Joseph, E. A., Kellock, A. J.Year:
2012
Language:
english
DOI:
10.1109/iedm.2012.6478967
File:
PDF, 2.94 MB
english, 2012