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Analysis and Modeling of the Transient Local Tunneling in Gate Oxides
Beug, M.F., Ferretti, R., Hofmann, K.R.Volume:
4
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2003.821528
Date:
March, 2004
File:
PDF, 382 KB
english, 2004