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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics
Jung, Seungjae, Siddik, Manzar, Lee, Wootae, Park, Jubong, Xinjun Liu,, Jiyong Woo,, Godeuni Choi,, Lee, Joonmyoung, Lee, Nodo, Jang, Yun Hee, Hwang, HyunsangYear:
2011
Language:
english
DOI:
10.1109/iedm.2011.6131483
File:
PDF, 791 KB
english, 2011