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[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - High-Voltage AlGaN/GaN Schottky Barrier Diodes on Si Substrate with Low-Temperature GaN Cap Layer for Edge Termination
Kamada, A., Matsubayashi, K., Nakagawa, A., Terada, Y., Egawa, T.Year:
2008
Language:
english
DOI:
10.1109/ispsd.2008.4538939
File:
PDF, 188 KB
english, 2008