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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS 2011) - College Park, MD (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - GaN power Schottky diodes fabricated on low doped MOCVD layers grown on multiple substrates
Tompkins, R. P., Zhou, S., Smith, J. R., Derenge, M. A., Kirchner, K. W., Jones, K. A., Mulholland, G., Metzger, R., Leach, J., Suvarna, P., Tungare, M., Tripathi, N., Shahedipour-Sandvik, F.Year:
2011
Language:
english
DOI:
10.1109/isdrs.2011.6135262
File:
PDF, 153 KB
english, 2011