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[IEEE 2010 International Symposium on Next-Generation Electronics (ISNE) - Kaohsiung, Taiwan (2010.11.18-2010.11.19)] 2010 International Symposium on Next Generation Electronics - A novel vertical MOSFET with bMPI structure for 1T-DRAM application
Chen, Cheng-Hsin, Lin, Jyi-, Eng, Yi-Chuen, Lin, Po-Hsieh, Chiu, Hsien-Nan, Chang, Tzu-Feng, Tai, Chih-Hsuan, Lu, Kuan-Yu, Fan, Yi-Hsuan, Chang, Yu-Che, Chen, Hsuan-HsuYear:
2010
Language:
english
DOI:
10.1109/isne.2010.5669180
File:
PDF, 922 KB
english, 2010