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[IEEE Microsystems (ASDAM) - Smolenice, Slovakia (2010.10.25-2010.10.27)] The Eighth International Conference on Advanced Semiconductor Devices and Microsystems - Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs

Kuzmik, J., Ostermaier,, Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Douvry, Y., Gaquiere, Ch., De Jaeger, J.-C., Strasser, G., Pogany, D., Gorni
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Year:
2010
Language:
english
DOI:
10.1109/asdam.2010.5666325
File:
PDF, 84 KB
english, 2010
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