Lanthanide (Tb)-doped HfO/sub 2/ for high-density MIM...

IEEE Electron Device Letters 2003 / 07 Vol. 24; Iss. 7

Lanthanide (Tb)-doped HfO/sub 2/ for high-density MIM capacitors

Sun Jung Kim,, Byung Jin Cho,, Ming-Fu Li,, Chunxiang Zhu,, Chin, A., Dim-Lee Kwong,
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Volume:
24
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2003.814024
Date:
July, 2003
File:
PDF, 230 KB
english, 2003
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