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[IEEE 2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 - Vienna, Austria (15-16 Nov. 2001)] 2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567) - Noise in p-channel SiGe and Si MOSFETs with gate oxide grown by low temperature plasma anodisation

Lukyanchikova, N.B., Petrichuk, M.V., Garbar, N.P., Riley, L.S., Hall, S.
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Year:
2001
Language:
english
DOI:
10.1109/edmo.2001.974304
File:
PDF, 379 KB
english, 2001
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