[IEEE 2014 14th International Workshop on Junction Technology (IWJT) - Shanghai, China (2014.5.18-2014.5.20)] 2014 International Workshop on Junction Technology (IWJT) - Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam
Uedono, Akira, Fujishima, Tatsuya, Cao, Yu, Joglekar, Sameer, Piedra, Daniel, Lee, Hyung-Seok, Zhang, Yuhao, Zhang, Yang, Yoshihara, Nakaaki, Ishibashi, Shoji, Sumiya, Masatomo, Laboutin, Oleg, JohnsoYear:
2014
Language:
english
DOI:
10.1109/iwjt.2014.6842034
File:
PDF, 376 KB
english, 2014