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[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - In-situ barrier formation for high reliable W/barrier/poly-Si gate using denudation of WN/sub x/ on polycrystalline Si
Byung Hak Lee,, Dong Kyun Sohn,, Ji-Soo Park,, Chang Hee Han,, Yun-Jun Huh,, Jeong Soo Byun,, Jae Jeong Kim,Year:
1998
Language:
english
DOI:
10.1109/iedm.1998.746380
File:
PDF, 578 KB
english, 1998