Breakdown voltage enhancement of the p-n junction by...

Breakdown voltage enhancement of the p-n junction by self-aligned double diffusion process through a tapered SiO2 implant mask

Han-Soo Kim,, Seong-Dong Kim,, Min-Koo Han,, Seok-Nam Yoon,, Yearn-Ik Choi,
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Volume:
16
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.406803
Date:
September, 1995
File:
PDF, 253 KB
english, 1995
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