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Current–Voltage Characteristics of GeSn/Ge Heterojunction Diodes Grown by Molecular Beam Epitaxy
Kim, Sangcheol, Gupta, Jay, Bhargava, Nupur, Coppinger, Matthew, Kolodzey, JamesVolume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2013.2278371
Date:
October, 2013
File:
PDF, 455 KB
english, 2013