[IEEE 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Albany, NY, USA (2009.09.29-2009.10.2)] 2009 17th International Conference on Advanced Thermal Processing of Semiconductors - Experimental and theoretical analysis of dopant activation in double implanted silicon by pulsed laser thermal annealing
Huet, K., Boniface, C., Fisicaro, G., Desse, F., Variam, N., Erokhin, Y., Magna, A. La, Privitera, V., Schuhmacher, M., Besaucele, H., Venturing, J.Year:
2009
Language:
english
DOI:
10.1109/rtp.2009.5373482
File:
PDF, 1.34 MB
english, 2009