![](/img/cover-not-exists.png)
[Japan Soc. Applied Phys 2003 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (10-12 June 2003)] 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) - Fabrication of HfSiON gate dielectrics by plasma oxidation and nitridation, optimized for 65 nm mode low power CMOS applications
Inumiya, S., Sekine, K., Niwa, S., Kaneko, A., Sato, M., Watanabe, T., Fukui, H., Kamata, Y., Koyama, M., Nishiyama, A., Takayanagi, M., Eguchi, K., Tsunashima, Y.Year:
2003
Language:
english
DOI:
10.1109/vlsit.2003.1221064
File:
PDF, 185 KB
english, 2003