[IEEE 9th International Symposium on Power Semiconductor...

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[IEEE 9th International Symposium on Power Semiconductor Devices and IC's - Weimar, Germany (26-29 May 1997)] Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - An improvement on p-channel SOI LIGBT by adopting slit type p-drift structure

Akiyama, H., Watabe, K., Terashima, T., Okada, M., Nobuto, S., Yamawaki, M., Hirao, T.
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Year:
1997
Language:
english
DOI:
10.1109/ispsd.1997.601516
File:
PDF, 258 KB
english, 1997
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