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[IEEE 2006 International Workshop on Junction Technology - Shanghai, China ()] 2006 International Workshop on Junction Technology - Effect of Si-implantation Induced Nanocrystals on Reducing the Oxide and Interface Traps Densities of PD SOI MOSFET Under Total-dose Irradiation
Qian Cong,, Zhang Zhengxuan,, Zhang Enxia,, He Wei,, Yang Hui,, Zhang Feng,, Lin Chenglu,Year:
2006
Language:
english
DOI:
10.1109/iwjt.2006.220902
File:
PDF, 4.74 MB
english, 2006