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[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap flash memory cell operations
Park, Jong Kyung, Moon, Dong-Il, Choi, Yang-Kyu, Lee, Seok-Hee, Lee, Ki-Hong, Pyi, Seung Ho, Cho, Byung JinYear:
2012
Language:
english
DOI:
10.1109/iedm.2012.6478964
File:
PDF, 487 KB
english, 2012