Improvement of Memory State Misidentification Caused by...

IEEE Electron Device Letters 2009 / 08 Vol. 30; Iss. 8

Improvement of Memory State Misidentification Caused by Trap-Assisted GIDL Current in a SONOS-TFT Memory Device

Te-Chih Chen,, Ting-Chang Chang,, Fu-Yen Jian,, Shih-Ching Chen,, Chia-Sheng Lin,, Ming-Hsien Lee,, Jim-Shone Chen,, Ching-Chieh Shih,
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2023827
Date:
August, 2009
File:
PDF, 334 KB
english, 2009
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