Role of E-E scattering in the enhancement of channel hot carrier degradation of deep-submicron NMOSFETs at high V/sub GS/ conditions
Rauch, S.E., La Rosa, G., Guarin, F.J.Volume:
1
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/7298.956705
Date:
June, 2001
File:
PDF, 201 KB
english, 2001