Hot-carrier stressing damage in wide and narrow LDD NMOS transistors
Bourcerie, M., Doyle, B.S., Marchetaux, J.-C., Boudou, A., Mingam, H.Volume:
10
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.31692
Date:
March, 1989
File:
PDF, 304 KB
english, 1989