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[IEEE Proceedings of International Reliability Physics Symposium - Dallas, TX, USA (1996.04.30-1996.05.2)] Proceedings of International Reliability Physics Symposium RELPHY-96 - Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations
Amerasekera, A., Ramaswamy, S., Mi-Chang Chang,, Duvvury, C.Year:
1996
Language:
english
DOI:
10.1109/relphy.1996.492137
File:
PDF, 834 KB
english, 1996