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[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - Steep channel & Halo profiles utilizing boron-diffusion-barrier layers (Si:C) for 32 nm node and beyond
Hokazono, A., Itokawa, H., Kusunoki, N., Mizushima, I., Inaba, S., Kawanaka, S., Toyoshima, Y.Year:
2008
Language:
english
DOI:
10.1109/vlsit.2008.4588583
File:
PDF, 497 KB
english, 2008