[IEEE 2009 10th International Symposium on Quality of Electronic Design (ISQED) - San Jose, CA, USA (2009.03.16-2009.03.18)] 2009 10th International Symposium on Quality of Electronic Design - A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability
Chenyue Ma,, Bo Li,, Lining Zhang,, Jin He,, Xing Zhang,, Xinnan Lin,, Mansun Chan,Year:
2009
Language:
english
DOI:
10.1109/isqed.2009.4810262
File:
PDF, 654 KB
english, 2009