[IEEE Symposium on VLSI Technology - Kyoto, Japan (1997.06.12-1997.06.12)] Symposium on VLSI Technology - A Novel 1b Trench DRAM Cell With Raised Shallow Trench Isolation (RSTI)
Alsmeier,, Kelleher,, Beintner,, Haensch,, Mandelman,, Hoh,, Ninomiya,, Srinivasan,, Bronner,Year:
1997
Language:
english
DOI:
10.1109/vlsit.1997.623674
File:
PDF, 246 KB
english, 1997