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[IEEE ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - Santa Barbara, CA, USA (May 23-26, 2005)] Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - Floating Island and Thick Bottom Oxide Trench Gate MOSFET (FITMOS)-A 60V Ultra Low On-Resistance Novel MOSFET with Superior Internal Body Diode
Hidefumi Takaya, Kyosuke MiyagiYear:
2005
Language:
english
DOI:
10.1109/ispsd.2005.1487946
File:
PDF, 413 KB
english, 2005