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[IEEE 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Albany, NY, USA (2009.09.29-2009.10.2)] 2009 17th International Conference on Advanced Thermal Processing of Semiconductors - Activation of ion implanted Si for backside processing by ultra-fast laser thermal annealing: Energy homogeneity and micro-scale sheet resistance
Huet, K., Lin, R., Boniface, C., Desse, F., Petersen, D. H., Hansen, O., Variam, N., Magna, A. La, Schuhmacher, M., Jensen, A., Nielsen, P.F., Besaucele, H., Venturing, J.Year:
2009
Language:
english
DOI:
10.1109/rtp.2009.5373465
File:
PDF, 1.25 MB
english, 2009