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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - An advanced low power, high performance, strained channel 65nm technology
Tyagi, S., Auth, C., Bai, P., Curello, G., Deshpande, H., Gannavaram, S., Golonzka, O., Heussner, R., James, R., Kenyon, C., Lee, S.-H., Lindert, N., Liu, M., Nagisetty, R., Natarajan, S., Parker, C.,Year:
2005
Language:
english
DOI:
10.1109/iedm.2005.1609318
File:
PDF, 1.30 MB
english, 2005