Impact of metal work function on memory properties of...

IEEE Electron Device Letters 2006 / 06 Vol. 27; Iss. 6

Impact of metal work function on memory properties of charge-trap flash memory devices using fowler-nordheim P/E mode

Sanghun Jeon,, Jeong Hee Han,, Junghoon Lee,, Sangmoo Choi,, Hyunsang Hwang,, Chungwoo Kim,
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Volume:
27
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2006.874216
Date:
June, 2006
File:
PDF, 129 KB
english, 2006
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