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[IEEE ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics - Honolulu, HI, USA (21 July-2 Aug. 2000)] ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics (IEEE Cat. No.00CH37076) - Electrical characteristics of CeO/sub 2/ buffer layer for a FRAM
Kyunghae Kim,, Sukwon Choi,, Sunghoon Kim,, Yonghan Roh,, Hoongjoo Lee,, Donggeun Jung,, Junsin Yi,Volume:
2
Year:
2001
Language:
english
DOI:
10.1109/isaf.2000.942400
File:
PDF, 294 KB
english, 2001