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[IEEE Technology (ICICDT) - Grenoble, France (2010.06.2-2010.06.4)] 2010 IEEE International Conference on Integrated Circuit Design and Technology - Modeling the effects of plasma-induced physical damage on subthreshold leakage current in scaled MOSFETs

Eriguchi, Koji, Kamei, Masayuki, Takao, Yoshinori, Ono, Kouichi
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Year:
2010
Language:
english
DOI:
10.1109/icicdt.2010.5510280
File:
PDF, 599 KB
english, 2010
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