[IEEE International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA (12-16 May 2003)] International Conference onIndium Phosphide and Related Materials, 2003. - Growth of highly p-type doped GaAsSb:C for HBT application
Neumann, S., Prost, W., Tegude, F.-J.Year:
2003
Language:
english
DOI:
10.1109/iciprm.2003.1205446
File:
PDF, 221 KB
english, 2003