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[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - Improvement of endurance to hot carrier degradation by hydrogen blocking P-SiO
Yoshida, S., Okuyama, K., Kanai, F., Kawate, Y., Motoyoshi, M., Katto, H.Year:
1988
DOI:
10.1109/iedm.1988.32740
File:
PDF, 184 KB
1988