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[IEEE 28th Annual on Reliability Physics Symposium - New Orleans, LA, USA (27-29 March 1990)] 28th Annual Proceedings on Reliability Physics Symposium - Drain-avalanche induced hole injection and generation of interface traps in thin oxide MOS devices
Rakkhit, R., Haddad, S., Chang, C., Yue, J.Year:
1990
DOI:
10.1109/relphy.1990.66078
File:
PDF, 314 KB
1990