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DIBL considerations of extended drain structure for 0.1 /spl mu/m MOSFET's
Jiunn-Yann Tsai,, Jie Sun,, Yee, K.F., Osburn, C.M.Volume:
17
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.506358
Date:
July, 1996
File:
PDF, 347 KB
english, 1996