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[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Three-dimensional simulation of focused ion beam processing using the level set method

Ertl, Otmar, Filipovic, Lado, Selberherr, Siegfried
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Year:
2010
Language:
english
DOI:
10.1109/sispad.2010.5604573
File:
PDF, 341 KB
english, 2010
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