[IEEE International Electron Devices Meeting. Technical...

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[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - Reliability evaluation of HfSiON gate dielectric film with 12.8 Å SiO/sub 2/ equivalent thickness

Shanware, A., McPherson, J., Visokay, M.R., Chambers, J.J., Rotondaro, A.L.P., Bu, H., Bevan, M.J., Khamankar, R., Colombo, L.
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Year:
2001
Language:
english
DOI:
10.1109/iedm.2001.979451
File:
PDF, 350 KB
english, 2001
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