![](/img/cover-not-exists.png)
[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - Reliability evaluation of HfSiON gate dielectric film with 12.8 Å SiO/sub 2/ equivalent thickness
Shanware, A., McPherson, J., Visokay, M.R., Chambers, J.J., Rotondaro, A.L.P., Bu, H., Bevan, M.J., Khamankar, R., Colombo, L.Year:
2001
Language:
english
DOI:
10.1109/iedm.2001.979451
File:
PDF, 350 KB
english, 2001