Growth of GaN layers onto misoriented (0001) sapphire by metalorganic chemical vapor deposition
Pécz, B., di Forte-Poisson, M. A., Huet, F., Radnóczi, G., Tóth, L., Papaioannou, V., Stoemenos, J.Volume:
86
Year:
1999
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.371654
File:
PDF, 1.97 MB
english, 1999