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[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - Impact of Cu diffusion from Cu through-silicon via (TSV) on device reliability in 3-D LSIs evaluated by transient capacitance measurement
Lee, Kangwook, Bea, Jichel, Ohara, Yuki, Fukushima, Takafumi, Tanaka, Tetsu, Koyanagi, MitsumasaYear:
2012
Language:
english
DOI:
10.1109/irps.2012.6241777
File:
PDF, 760 KB
english, 2012