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GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers
Cordier, Y., Frayssinet, E., Chmielowska, M., Nemoz, M., Courville, A., Vennéguès, P., Mierry, P. De, Chenot, S., Camus, J., Aissa, K. Ait, Simon, Q., Brizoual, L. Le, Djouadi, M. A., Defrance, N., LeVolume:
11
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201300453
Date:
February, 2014
File:
PDF, 654 KB
english, 2014