GaN high electron mobility transistors on silicon...

Physica status solidi 2014 / 02 Vol. 11; Iss. 3-4

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Cordier, Y., Frayssinet, E., Chmielowska, M., Nemoz, M., Courville, A., Vennéguès, P., Mierry, P. De, Chenot, S., Camus, J., Aissa, K. Ait, Simon, Q., Brizoual, L. Le, Djouadi, M. A., Defrance, N., Le
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Volume:
11
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201300453
Date:
February, 2014
File:
PDF, 654 KB
english, 2014
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