(20$ \bar 2 $1) MOVPE and HVPE GaN grown on 2″ patterned...

(20$ \bar 2 $1) MOVPE and HVPE GaN grown on 2″ patterned sapphire substrates

Meisch, Tobias, Alimoradi-Jazi, Maryam, Klein, Martin, Scholz, Ferdinand
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Volume:
11
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201300396
Date:
February, 2014
File:
PDF, 1.62 MB
english, 2014
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