Improvements of MOVPE grown (11$ \bar 2 $2) oriented GaN on...

Physica status solidi 2014 / 02 Vol. 11; Iss. 3-4

Improvements of MOVPE grown (11$ \bar 2 $2) oriented GaN on pre-structured sapphire substrates using a SiN x interlayer and HVPE overgrowth

Caliebe, Marian, Meisch, Tobias, Neuschl, Benjamin, Bauer, Sebastian, Helbing, Jeffrey, Beck, Dominik, Thonke, Klaus, Klein, Martin, Heinz, Dominik, Scholz, Ferdinand
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Volume:
11
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201300527
Date:
February, 2014
File:
PDF, 354 KB
english, 2014
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