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[IEEE 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. - Kagoshima, Japan (May 31 - June 4, 2004)] 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. - Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm
Pierobon, R., Rampazzo, F., Clonfero, F., De Pellegrin, T., Bertazzo, M., Meneghesso, G., Zanoni, E., Suemitsu, T., Enoki, T.Year:
2004
Language:
english
DOI:
10.1109/iciprm.2004.1442802
File:
PDF, 533 KB
english, 2004