The influence of gate edge shape on the degradation in...

IEEE Electron Device Letters 1991 / 07 Vol. 12; Iss. 7

The influence of gate edge shape on the degradation in hot-carrier stressing of n-channel transistors

Doyle, B.S., Bergonzoni, C., Boudou, A.
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Volume:
12
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.103608
Date:
July, 1991
File:
PDF, 301 KB
english, 1991
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